Разъем для карты Micro SIM, раскладной, 6P, H=1,8 мм, со штифтом

1、Material and plating
(1)、Plastic core:LCP,UL 94V-0,black
(2)、Terminal: Phosphor bronze C5210-HT=0.15, gold-plated nickel
(3)、Shell: stainless steel SuS304 T=0.2
2、Technical parameters:
Contact resistance: 100mΩ MaX
Insulation resistance: 1000MΩ Min (500DC)
Rated current: 1A Max for each contact
Rated voltage: 30V Max(DC)
Withstand voltage: 500V r.m.s/min
Operating temperature:-40℃C~85℃
Humidity:90%~95%
Lifespan: >3000 times